Title :
A surface-normal coupled-quantum-well modulator at 1.55 microns
Author :
Stievater, T.H. ; Rabinovich, W.S. ; Goetz, Peter G. ; Mahon, R. ; Bhiari, S.C.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
We demonstrate that a surface-normal coupled-quantum-well InGaAs/InAlAs electroabsorptive modulator can provide optical modulation that is comparable to a square-well modulator at 1.55 /spl mu/m; but at much lower driving voltages.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; quantum well devices; semiconductor quantum wells; 1.55 micron; InGaAs-InAlAs; InGaAs/InAlAs modulator; coupled-quantum-well modulator; electroabsorptive modulator; optical modulation; surface-normal modulator;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
