Title :
Misalignment-tolerant surface-normal low-voltage modulator for optical interconnects at 1.55 /spl mu/m
Author :
Helman, N.C. ; Roth, J.E. ; Miller, D.A.B. ; Bour, D.P.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
Abstract :
We introduce an electroabsorption modulator architecture that combines desirable properties of conventional waveguide designs (e.g. low-voltage operation and optical bandwidth) and surface-normal designs (e.g. misalignment tolerance). Results for an InP/InGaAsP implementation are presented.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; optical design techniques; optical interconnections; optical waveguide components; 1.55 mum; InP-InGaAsP; InP/InGaAsP implementation; conventional waveguide designs; electroabsorption modulator; low-voltage modulator; low-voltage operation; misalignment tolerance; misalignment-tolerant modulator; optical bandwidth; optical interconnects; surface-normal designs; surface-normal modulator; waveguide modulators; Bandwidth; Modulation coding; Optical beams; Optical design; Optical interconnections; Optical modulation; Optical resonators; Optical surface waves; Optical waveguides; Semiconductor diodes;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
