• DocumentCode
    421491
  • Title

    High sensitivity silicon-based VIS/NIR photodetectors

  • Author

    Carey, J.E. ; Mazur, E.

  • Author_Institution
    Div. of Eng. & Appl. Sci., Harvard Univ., Cambridge, MA, USA
  • Volume
    2
  • fYear
    2004
  • fDate
    16-21 May 2004
  • Abstract
    We fabricate silicon-based photodiodes using a simple femtosecond-laser microstructuring technique. The detectors are ten times more sensitive than commercial silicon PlN photodiodes at visible wavelengths and can be used at wavelengths up to 1650 nm.
  • Keywords
    elemental semiconductors; high-speed optical techniques; infrared detectors; infrared spectra; laser materials processing; optical fabrication; photodetectors; photodiodes; silicon; visible spectra; Si; VIS/NIR photodetectors; femtosecond-laser microstructuring; high sensitivity photodetectors; photodiode fabrication; silicon-based photodetectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2004. (CLEO). Conference on
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-55752-777-6
  • Type

    conf

  • Filename
    1360683
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=421491