Title :
High sensitivity silicon-based VIS/NIR photodetectors
Author :
Carey, J.E. ; Mazur, E.
Author_Institution :
Div. of Eng. & Appl. Sci., Harvard Univ., Cambridge, MA, USA
Abstract :
We fabricate silicon-based photodiodes using a simple femtosecond-laser microstructuring technique. The detectors are ten times more sensitive than commercial silicon PlN photodiodes at visible wavelengths and can be used at wavelengths up to 1650 nm.
Keywords :
elemental semiconductors; high-speed optical techniques; infrared detectors; infrared spectra; laser materials processing; optical fabrication; photodetectors; photodiodes; silicon; visible spectra; Si; VIS/NIR photodetectors; femtosecond-laser microstructuring; high sensitivity photodetectors; photodiode fabrication; silicon-based photodetectors;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
