DocumentCode
421513
Title
Transit-time limited response from low capacitance CMOS photodetectors
Author
Bhatnagar, Aparna ; Latif, Salman ; Miller, David A B
Author_Institution
Dept. of Electr. Eng., Stanford Univ., CA, USA
Volume
2
fYear
2004
fDate
16-21 May 2004
Abstract
Efficient GHz silicon detectors in unmodified CMOS processes are attractive for dense optical interconnection to electronics. Using blue short pulses we demonstrate 50 ps rise time lateral P-I-N detectors in a commercial silicon-on-sapphire CMOS process.
Keywords
CMOS integrated circuits; integrated optoelectronics; p-i-n photodiodes; photodetectors; sapphire; silicon; CMOS photodetectors; GHz silicon detectors; P-I-N detectors; Si-Al/sub 2/O/sub 3/; blue short pulses; commercial silicon-on-sapphire CMOS process; dense optical interconnection; electronics; low capacitance photodetectors; transit-time limited response;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1360705
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