Hydrogen-Sensing Properties of a Pd/AlGaN/GaN-Based Field-Effect Transistor Under a Nitrogen Ambience

Author

Chi-Shiang Hsu ; Huey-Ing Chen ; Po-Cheng Chou ; Jian-Kai Liou ; Chun-Chia Chen ; Chung-Fu Chang ; Wen-Chau Liu

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

13

Issue

5

fYear

2013

fDate

May-13

Firstpage

1787

Lastpage

1793

Abstract

The hydrogen-sensing characteristics of a Pd/AlGaN/GaN heterostructure held-effect transistor (HFET) under a nitrogen ambience are studied in this paper. Good and stable hydrogen-sensing behaviors are obtained over the operating temperature from 30°C to 250°C. In addition, HFET shows the significant hydrogen-detecting ability under an extremely low hydrogen concentration of 10-ppb H₂/N₂. Good transient responses are also observed even at room temperature. In addition, a small and nearly constant value of recovery time (≈20 s) is acquired when the hydrogen concentration is higher than 1-ppm H₂/N₂ at room temperature. Therefore, the studied device shows a promise for high-performance, high-temperature electronics, microsensors, and microelectromechanical system applications.

Keywords

III-V semiconductors; aluminium compounds; chemical sensors; field effect transistors; gallium compounds; hydrogen; microsensors; palladium; wide band gap semiconductors; Pd-AlGaN-GaN; field-effect transistor; high-temperature electronics; hydrogen-sensing properties; microelectromechanical system; microsensors; nitrogen ambience; operating temperature; temperature 30 degC to 250 degC; Aluminum gallium nitride; Gallium nitride; HEMTs; Hydrogen; MODFETs; Temperature sensors; HFET; Pd/AlGaN; hydrogen sensor; nitrogen ambience;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2013.2243430

Filename

6449275