DocumentCode :
421570
Title :
On Raman gain in silicon waveguides: limitations from two-photon-absorption generated carriers
Author :
Liang, T.K. ; Tsang, H.K.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, China
Volume :
2
fYear :
2004
fDate :
16-21 May 2004
Abstract :
We show experimentally that free carriers generated by two-photon-absorption in silicon-on-insulator (SOI) waveguides limit the available pump power for stimulated Raman scattering and lead to net optical loss.
Keywords :
optical losses; optical pumping; optical waveguides; semiconductor optical amplifiers; silicon-on-insulator; stimulated Raman scattering; two-photon processes; Raman gain; Si; optical loss; pump power; silicon waveguides; silicon-on-insulator waveguides; stimulated Raman scattering; two-photon-absorption generated carriers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
Type :
conf
Filename :
1360762
Link To Document :
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