DocumentCode
421609
Title
Electron capture time in InGaN/GaN multiple quantum wells
Author
Fan, W.H. ; Olaizola, S.M. ; Wells, J.-P.R. ; Mowbray, D.J. ; Skolnick, M.S. ; Fox, A.M. ; Wang, T. ; Parbrook, P.J.
Author_Institution
Dept. of Phys. & Astron., Univ. of Sheffield, UK
Volume
2
fYear
2004
fDate
16-21 May 2004
Abstract
We have used femtosecond spectroscopy to determine the electron capture times of blue-emitting InGaN/GaN quantum well laser structures. We confirm theoretical predications that the capture time depends on both the temperature and carrier density.
Keywords
III-V semiconductors; carrier density; electron capture; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wells; time resolved spectra; InGaN-GaN; blue-emitting InGaN-GaN quantum well laser structures; carrier density; electron capture time; femtosecond spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1360804
Link To Document