• DocumentCode
    421735
  • Title

    Faraday rotation in semiconductors for photonic integration

  • Author

    Zaman, Tauhid ; Guo, Xiaoyun ; Ram, Rajeev J.

  • Author_Institution
    Res. Lab of Electron., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • Volume
    2
  • fYear
    2004
  • fDate
    16-21 May 2004
  • Abstract
    Magnetically doped Fe:InP is demonstrated to provide 45/spl deg/ rotation at 1550 nm with only 1.66 dB insertion loss. Enhanced Faraday rotation in Fe:InGaAsP resonators and high-index contrast waveguides is also demonstrated.
  • Keywords
    Faraday effect; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; iron; optical losses; optical resonators; optical waveguides; refractive index; 1.66 dB; 1550 nm; Faraday rotation; Fe:InGaAsP resonators; InGaAsP:Fe; InP:Fe; high-index contrast waveguides; insertion loss; photonic integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2004. (CLEO). Conference on
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-55752-777-6
  • Type

    conf

  • Filename
    1360970
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=421735