Title :
Photoluminescence from a Nd/sup 3+/-doped AIGaAs semiconductor structure
Author :
Ullmann, Kirk ; Su, M. ; Silverman, K.L. ; Berry, J.J. ; Harvey, T.E. ; Mirin, R.P.
Author_Institution :
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
Abstract :
We report room-temperature photoluminescence from a Nd/sup 3+/ -doped AlGaAs semiconductor. Oxidation of the AlGaAs greatly improves the luminescence efficiency of the Nd/sup 3+/ ions.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; neodymium; optical materials; oxidation; photoluminescence; 20 degC; AlGaAs:Nd/sup 3+/; Nd/sup 3+/-doped AIGaAs semiconductor structure; luminescence efficiency; oxidation; photoluminescence;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
