DocumentCode
421756
Title
Photoluminescence from a Nd/sup 3+/-doped AIGaAs semiconductor structure
Author
Ullmann, Kirk ; Su, M. ; Silverman, K.L. ; Berry, J.J. ; Harvey, T.E. ; Mirin, R.P.
Author_Institution
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
Volume
2
fYear
2004
fDate
16-21 May 2004
Abstract
We report room-temperature photoluminescence from a Nd/sup 3+/ -doped AlGaAs semiconductor. Oxidation of the AlGaAs greatly improves the luminescence efficiency of the Nd/sup 3+/ ions.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; neodymium; optical materials; oxidation; photoluminescence; 20 degC; AlGaAs:Nd/sup 3+/; Nd/sup 3+/-doped AIGaAs semiconductor structure; luminescence efficiency; oxidation; photoluminescence;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361005
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