Two 320 GHz Signal Sources Based on SiGe HBT Technology

Author

Jongwon Yun ; Daekeun Yoon ; Seungyoon Jung ; Kaynak, Mehmet ; Tillack, Bernd ; Jae-Sung Rieh

Author_Institution

Sch. of Electr. Eng., Korea Univ., Seoul, South Korea

Volume

25

Issue

3

fYear

2015

fDate

Mar-15

Firstpage

178

Lastpage

180

Abstract

Two 320 GHz signal sources, a push-push oscillator and an integrated oscillator-doubler, based on a 130 nm SiGe HBT technology are reported. Both signal sources adopt a common-base cross-coupled topology as an oscillator core. The doubler employs a Gm-boosting technique for improved conversion loss. The push-push oscillator exhibits an output power of -6.3 dBm and a phase noise of -96.6 dBc/Hz at 10 MHz offset. The output power and the phase noise of the integrated oscillator-doubler are 1.6 dBm and -94.7 dBc/Hz at 10 MHz offset, respectively. They dissipate dc power of 101.2 mW and 197.4 mW, leading to DC-to-RF efficiency of 0.2 % and 0.7 %, respectively.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; phase noise; signal sources; submillimetre wave oscillators; submillimetre wave transistors; Gm-boosting technique; SiGe; SiGe HBT technology; common-base cross-coupled topology; efficiency 0.2 percent; efficiency 0.7 percent; frequency 320 GHz; improved conversion loss; integrated oscillator doubler; integrated oscillator-doubler; oscillator core; phase noise; power 101.2 mW; power 197.4 mW; push-push oscillator; signal sources; size 130 nm; Heterojunction bipolar transistors; Noise measurement; Phase noise; Power generation; Silicon germanium; Topology; Heterojunction bipolar transistors (HBTs); multiplying circuits; oscillators; signal generators; silicon germanium;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2015.2391011

Filename

7027248