DocumentCode :
421776
Title :
Quantum dot infrared photodetectors (QDIPs) by MOCVD and QDIP focal plane array
Author :
Razeghi, M. ; Wei Zhang ; Ho-Chul Lim ; Tsao, S. ; Jutao Jiang
Volume :
2
fYear :
2004
fDate :
16-21 May 2004
Firstpage :
1078
Lastpage :
1078
Abstract :
We report high temperature high detectivity MWIR quantum dot infrared photodetectors (QD1P)grown by LP-MOCVD. Record high detectivities were obtained. A 256x256 infrared FPA based on InGaAsiInCaP QDIP was demonstrated.
Keywords :
Electrons; Gallium arsenide; Indium phosphide; Infrared detectors; MOCVD; Molecular beam epitaxial growth; Photodetectors; Quantum dots; Temperature; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
Type :
conf
Filename :
1361058
Link To Document :
بازگشت