DocumentCode
421811
Title
Vertically integrated InGaAsP/InP microstack lasers
Author
An, R. ; Chan, W.K. ; Shellenbarger, Z.A. ; Willner, B.I.
Author_Institution
Sarnoff Corp., Princeton, NJ, USA
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
High power vertically integrated 1.59 /spl mu/m wavelength InGaAsP/InP microstack lasers with three identical optically decoupled emitters series-connected through low resistance tunnel junctions have been realized by MOCVD growth for the first time.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; quantum well lasers; semiconductor growth; 1.59 mum; InGaAsP-InP; InGaAsP/InP lasers; MOCVD growth; identical optically decoupled emitters; low resistance tunnel junctions; microstack lasers; quantum well lasers; series-connected emitters; vertically integrated lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361259
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