Title :
Vertically integrated InGaAsP/InP microstack lasers
Author :
An, R. ; Chan, W.K. ; Shellenbarger, Z.A. ; Willner, B.I.
Author_Institution :
Sarnoff Corp., Princeton, NJ, USA
Abstract :
High power vertically integrated 1.59 /spl mu/m wavelength InGaAsP/InP microstack lasers with three identical optically decoupled emitters series-connected through low resistance tunnel junctions have been realized by MOCVD growth for the first time.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; quantum well lasers; semiconductor growth; 1.59 mum; InGaAsP-InP; InGaAsP/InP lasers; MOCVD growth; identical optically decoupled emitters; low resistance tunnel junctions; microstack lasers; quantum well lasers; series-connected emitters; vertically integrated lasers;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
