Title :
50-W peak power AlGaAs/InGaAs/GaAs single quantum-well 990-nm diode lasers
Author :
Martinelli, R.U. ; Li, J. ; Khalfin, V. ; Braun, A.M. ; Willner, B.I. ; Harvey, M. ; Shellenbarger, Z. ; Abeles, J.H.
Author_Institution :
Sarnoff Corp., Princeton, NJ, USA
Abstract :
50 W peak-power was demonstrated from 2-mm-long, 100-/spl mu/m-aperture AlGaAs/InGaAs/GaAs single-quantum-well lasers driven with 40-ns, 80-A current pulses. Grown by organo-metallic vapor-phase epitaxy, the lasers have internal losses of 1.5 cm/sup -1/ and internal efficiencies of 0.90.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; optical losses; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 100 mum; 2 mm; 40 ns; 50 W; 80 A; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs lasers; diode lasers; internal losses; organometallic vapor-phase epitaxy; single quantum-well lasers;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
