DocumentCode
421936
Title
High-brightness slab-coupled semiconductor lasers single-spatial, large-diameter mode
Author
Donnelly, J.P. ; Huang, R.K. ; Missagia, L.J. ; Plant, J. ; Juodawlkis, P.W.
Author_Institution
Lincoln Lab., MIT, Lexington, MA, USA
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
A high-brightness semiconductor diode laser concept, which utilizes a slab-coupled optical waveguide region to achieve several potentially important advances in performance, is described. Results on devices, which utilize this design concept, in InGaAsP/InP and AlGaAs/InGaAs/GaAs are presented.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; optical couplers; quantum well lasers; waveguide lasers; AlGaAs-InGaAs-GaAs; InGaAsP-InP; diode laser; high-brightness lasers; large-diameter mode; semiconductor lasers; single-spatial lasers; slab-coupled lasers; slab-coupled optical waveguide;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361398
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