Title :
A 0.6 W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32 /spl mu/m
Author :
Smith, S.A. ; Hopkins, J.-M. ; Sun, H.D. ; Burns, D. ; Calvez, S. ; Dawson, M.D. ; Jouhti, T. ; Konttinen, J. ; Pessa, M.
Author_Institution :
Inst. of Photonics, Strathclyde Univ., Glasgow, UK
Abstract :
We report the first high-power vertical external-cavity surface-emitting laser operating at 1.3 /spl mu/m. Continuous-wave output power greater than 0.6 W was achieved using a GaInNAs/GaAs structure capillary-bonded to a single-crystal diamond heatspreader.
Keywords :
III-V semiconductors; diamond; gallium compounds; indium compounds; infrared sources; laser cavity resonators; quantum well lasers; surface emitting lasers; thermo-optical effects; 0.6 W; 1.32 mum; C; GaInNAs laser; GaInNAs-GaAs; GaInNAs/GaAs structure; capillary bonding; continuous-wave laser; high-power laser; quantum well lasers; single-crystal diamond heatspreader; vertical external-cavity surface-emitting laser;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
