Title :
Channel waveguide laser in neodymium doped silica-on-silicon by direct-UV-writing
Author :
Guilhot, D.A. ; Emmerson, G.D. ; Gawith, C.B.E. ; Shepherd, D.P. ; Williams, R.B. ; Smith, P.G.R.
Author_Institution :
Optoelectron. Res. Centre, Southampton Univ., UK
Abstract :
We demonstrate UV-written laser waveguides in neodymium-doped silica-on-silicon. Lasing at 1048-1056 nm and 1356 nm was observed and a slope efficiency of 33% and threshold of 4 mW were measured for the /sup 4/F/sub 3/2/ /spl rarr/ /sup 4/I/sub 11/2/ transition.
Keywords :
neodymium; optical fabrication; silicon; silicon compounds; solid lasers; waveguide lasers; /sup 4/F/sub 3/2/ /spl rarr/ /sup 4/I/sub 11/2/ transition; 1048 to 1056 nm; 1356 nm; 4 mW; SiO/sub 2/-Si:Nd; channel waveguide laser; direct-UV-writing; neodymium doped silica-on-silicon;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
