DocumentCode :
421957
Title :
Lateral band-structure engineering in micromachined semiconductors
Author :
Stievater, T.H. ; Rabinovich, W.S. ; Park, D. ; Goetz, Peter G. ; Boos, J.B. ; Katzer, D.S. ; Biermann, M.L.
Author_Institution :
Naval Res. Lab., Washington, DC
Volume :
1
fYear :
2004
fDate :
16-21 May 2004
Abstract :
We demonstrate that micromachining multiple quantum wells produces lateral (in-plane) modifications to the semiconductor band structure that are accurately modeled by finite-element analysis combined with an eight-level band-structure calculation
Keywords :
III-V semiconductors; band structure; electro-optical effects; finite element analysis; micromachining; semiconductor quantum wells; III-V semiconductors; eight-level band-structure calculation; finite-element analysis; lateral band-structure engineering; micromachined semiconductors; micromachining; multiple quantum wells; semiconductor band structure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
Type :
conf
Filename :
1361419
Link To Document :
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