Title :
GaInNAsSb/GaNAs VCSELs at 1.46 /spl mu/m
Author :
Wistey, M.A. ; Bank, S.R. ; Yuen, H.B. ; Goddard, L.L. ; Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA
Abstract :
We present electrically pumped GaInNAsSb VCSELs at 1.46 mum, the longest wavelength on GaAs to date. At -20 C, pulsed at 0.1% duty cycle, the threshold current density was 4.5 kA/cm2, with a peak output power of 0.77 mW
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; quantum well lasers; surface emitting lasers; 0.77 mW; 1.46 mum; GaInNAsSb VCSEL; GaInNAsSb-GaNAs; electrically pumped laser; threshold current density;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
