• DocumentCode
    421978
  • Title

    GaInNAsSb/GaNAs VCSELs at 1.46 /spl mu/m

  • Author

    Wistey, M.A. ; Bank, S.R. ; Yuen, H.B. ; Goddard, L.L. ; Harris, J.S., Jr.

  • Author_Institution
    Solid State & Photonics Lab., Stanford Univ., CA
  • Volume
    1
  • fYear
    2004
  • fDate
    16-21 May 2004
  • Abstract
    We present electrically pumped GaInNAsSb VCSELs at 1.46 mum, the longest wavelength on GaAs to date. At -20 C, pulsed at 0.1% duty cycle, the threshold current density was 4.5 kA/cm2, with a peak output power of 0.77 mW
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; quantum well lasers; surface emitting lasers; 0.77 mW; 1.46 mum; GaInNAsSb VCSEL; GaInNAsSb-GaNAs; electrically pumped laser; threshold current density;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2004. (CLEO). Conference on
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-55752-777-6
  • Type

    conf

  • Filename
    1361440
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=421978