Title :
Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers
Author :
Shterengas, Leon ; Yeh, Jeng-Ya ; Mawst, Luke J. ; Tansu, Nelson ; Belenky, Gregory
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York, Stony Brook, NY
Abstract :
Gain, loss and alpha-factor were measured in broad stripe 1.23 mum InGaAs and 1.29 mum InGaAsN single-QW lasers. Experiment shows that both differential gain with respect to current and alpha-factor tend to decrease in dilute-nitride devices compared with InGaAs-active lasers
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical losses; quantum well lasers; spectral line breadth; 1.23 mum; 1.29 mum; InGaAs; InGaAs lasers; InGaAs-active lasers; InGaAsN; InGaAsN lasers; alpha-factor; broad stripe lasers; differential gain; dilute-nitride devices; diode lasers; linewidth-enhancement factors; optical loss; single-quantum-well lasers;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
