Title :
The temperature sensitivity of GaAs-based 1.5 /spl mu/m GaInNAsSb lasers
Author :
Bank, S.R. ; Goddard, L.L. ; Wistey, M.A. ; Yuen, H.B. ; Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA
Abstract :
The temperature behavior of 1.5 mum GaInNAsSb edge-emitting lasers is analyzed through variation of cavity length and temperature. Monomolecular recombination and intervalence band absorption dominate the threshold current, and carrier leakage becomes important at elevated temperatures
Keywords :
III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; quantum well lasers; thermo-optical effects; valence bands; 1.5 mum; GaAs-based lasers; GaInNAsSb; GaInNAsSb lasers; carrier leakage; cavity length variation; edge-emitting lasers; intervalence band absorption; monomolecular recombination; temperature sensitivity;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
