Title :
Dilute-nitride mid-infrared type-II "W" quantum-well lasers on InP substrates
Author :
Vurgaftman, I. ; Meyer, J.R. ; Tansu, N. ; Mawst, L.J.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
It is predicted that InAsN/GaAsSb/InAsN/GaInP strain-compensated type-II "W" quantum wells grown on InP substrates should emit in the mid-IR (3-5 /spl mu/m) with favorable lasing characteristics.
Keywords :
III-V semiconductors; compensation; compressive strength; gallium arsenide; indium compounds; infrared sources; quantum well lasers; tensile strength; 3 to 5 mum; InAsN-GaAsSb-InAsN-GaInP; InP; InP substrates; dilute-nitride mid-infrared type-II quantum-well lasers;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
