DocumentCode
421995
Title
Fabrication of InGaAs quantum dots by metal organic chemical vapor deposition and selective area epitaxy
Author
Elarde, V.C. ; Swint, R.B. ; Yeoh, T.S. ; Coleman, J.J.
Author_Institution
Illinois Univ., Urbana, IL, USA
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
We have demonstrated the fabrication of uniform arrays of quantum dots by metal organic chemical vapor deposition using electron beam lithography and selective area epitaxy techniques. Photoluminescence data showing emission at 1250 nm is presented.
Keywords
III-V semiconductors; MOCVD; electron beam lithography; gallium arsenide; indium compounds; optical arrays; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; 1250 nm; InGaAs; InGaAs quantum dots; electron beam lithography; metal organic chemical vapor deposition; photoluminescence; selective area epitaxy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361459
Link To Document