Title :
Fabrication of InGaAs quantum dots by metal organic chemical vapor deposition and selective area epitaxy
Author :
Elarde, V.C. ; Swint, R.B. ; Yeoh, T.S. ; Coleman, J.J.
Author_Institution :
Illinois Univ., Urbana, IL, USA
Abstract :
We have demonstrated the fabrication of uniform arrays of quantum dots by metal organic chemical vapor deposition using electron beam lithography and selective area epitaxy techniques. Photoluminescence data showing emission at 1250 nm is presented.
Keywords :
III-V semiconductors; MOCVD; electron beam lithography; gallium arsenide; indium compounds; optical arrays; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; 1250 nm; InGaAs; InGaAs quantum dots; electron beam lithography; metal organic chemical vapor deposition; photoluminescence; selective area epitaxy;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
