Title :
Continuous-wave operation of InAsSb/InP quantum-dot lasers near 2 /spl mu/m at room temperature
Author :
Qiu, Yueming ; Uhl, David ; Keo, Sam
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
InAsSb quantum-dot lasers near 2 /spl mu/m were demonstrated in cw operation at room temperature with a threshold current density of below 1 kA/cm/sup 2/, output power of 3 mW/facet and a differential quantum efficiency of 13%.
Keywords :
III-V semiconductors; arsenic compounds; current density; indium compounds; laser transitions; quantum dot lasers; 13 percent; InAsSb-InP; continuous-wave operation; differential quantum efficiency; quantum-dot lasers; room temperature; threshold current density;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
