DocumentCode
422014
Title
Electrical characteristics of highly strained InGaAs/InAlAs 2 /spl mu/m quantum cascade light-emitting devices
Author
Banerjee, S. ; Shore, K.A. ; Mitchell, C.J. ; Sly, J.L. ; Missous, M.
Author_Institution
Sch. of Informatics, Univ. of Wales, Bangor, UK
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
Growth of electroluminescent devices operating at 2 /spl mu/m based on quantum cascade (QC) design of strain-compensated In/sub x/Ga/sub 1-x/As/In/sub y/Al/sub 1-y/As has been undertaken. Experimentally measured current-voltage characteristics are in good agreement with theoretical predictions.
Keywords
III-V semiconductors; aluminium compounds; compensation; electroluminescence; gallium arsenide; indium compounds; light emitting devices; molecular beam epitaxial growth; optical design techniques; semiconductor growth; semiconductor quantum wells; 2 mum; In/sub x/Ga/sub 1-x/As-In/sub y/Al/sub 1-y/As; current-voltage characteristics; electroluminescent devices growth; quantum cascade light-emitting devices; strain-compensated In/sub x/Ga/sub 1-x/As-In/sub y/Al/sub 1-y/As;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361478
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