DocumentCode
422020
Title
High power (3W) GaInAs/(AI)GaAs quantum dot tapered laser arrays with high wavelength stability and low divergence
Author
Auzanneau, S.C. ; Calligaro, M. ; Krakowski, M. ; Klopf, F. ; Deubert, S. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution
Thales Res. & Technol., Orsay, France
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
High power (3W) and low divergence (4/spl deg/ at FWHM) are demonstrated at 990 nm using arrays of index guided GaInAs/(Al)GaAs quantum dot tapered lasers. A low temperature shift (0.10 nm/K) of the wavelength is observed.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser stability; optical communication equipment; optical waveguides; quantum dot lasers; semiconductor laser arrays; 3 W; 990 nm; GaInAs-AlGaAs; divergence; quantum dot tapered laser arrays; wavelength shift; wavelength stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361484
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