Author :
Kuntz, M. ; Fiol, G. ; Laemmlin, M. ; Ledentsov, N.N. ; Bimberg, D. ; Thompson, M.G. ; Tan, K.T. ; Marinelli, C. ; Penty, R.V. ; White, I.H. ; van der Poel, M. ; Birkedal, D. ; Hvam, J. ; Kovsh, A.R. ; Ustinov, V.M.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; laser mode locking; laser transitions; optical saturable absorption; quantum dot lasers; 1.3 mum; 20 GHz; 35 GHz; Fourier-limited pulses; InGaAs-GaAs; passive mode-locking; quantum dot lasers; transform-limited mode-locked pulses; ultrafast absorber recovery times;