Title :
Measurements of intrinsic properties of high power CW single quantum well GaInNAsSb/GaAs lasers at 1.5 /spl mu/m
Author :
Goddard, L.L. ; Bank, S.R. ; Wistey, M.A. ; Yuen, H.B. ; Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
We present measurements of relative intensity noise (RIN) and non-radiative recombination of 1.5 /spl mu/m GaInNAsSb edge-emitting lasers. Differential gain of 4/spl times/10/sup -18/cm/sup 2/, K-factor of 0.75 ns and RIN below -150 dB/Hz at 7 mW were measured.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser noise; laser transitions; laser variables measurement; nitrogen; quantum well lasers; spontaneous emission; 0.75 ns; 1.5 mum; 7 mW; GaInNAsSb-GaAs; differential gain; edge-emitting lasers; nonradiative recombination; relative intensity noise; single quantum well lasers;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
