Title :
Microscopic imaging of defect density distribution in GaAs and InGaP using the decay time of photo-excited carriers
Author :
Horiuchi, K. ; Kamata, S. ; Sato, M. ; Kannari, Fumihiko ; Hase, M. ; Kitajima, M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan
Abstract :
Through pump-probe experiment using femtosecond laser pulses, we demonstrated that the defect density distribution in a GaAs and InGaP can be imaged by the decay time of photo-excited carriers.
Keywords :
III-V semiconductors; deep levels; gallium arsenide; high-speed optical techniques; indium compounds; optical pumping; point defects; GaAs; InGaP; decay time; defect density distribution; femtosecond laser pulses; microscopic imaging; photoexcited carriers; pump-probe experiment;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
