Title :
Transverse mode control by etching depth tuning in 1120-nm GaInAs/GaAs photonic crystal vertical-cavity surface-emitting lasers
Author :
Baek, Jong-Hwa ; Hwang, Ln-Kag ; Lee, Kum-Hee ; Lee, Yong-Hee ; Ju, Young-Gu ; Kondo, Takashi ; Miyamoto, Tomoyuki ; Koyama, Fumio
Author_Institution :
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
Transverse mode control by etching depth tuning is demonstration from long wavelength (1120 nm) photonics-crystal vertical-cavity surface-emitting lasers. The non-degenerate single-transverse mode was obtained in 12 /spl sim/ 18-pair-etched PC-VCSELs over the entire operating current range.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; laser modes; laser transitions; laser tuning; optical communication equipment; photonic crystals; quantum well lasers; surface emitting lasers; 1120 nm; GaInAs-GaAs; PC-VCSEL; etching depth tuning; nondegenerate single-transverse mode; photonic crystal vertical-cavity surface-emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
