DocumentCode
422222
Title
Surface plasmon enhanced light emitting efficiencies of InGaN/GaN quantum wells
Author
Okamoto, Koichi ; Niki, Isamu ; Shvartser, Alexander ; Narukawa, Yukio ; Mukai, Takashi ; Schere, Axel
Author_Institution
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
We report a dramatic increase in the light emitting efficiency of InGaN/GaN resulting from surface plasmon interaction between the quantum wells and evaporated silver layers, whereas no such enhancement was obtained from gold deposited samples.
Keywords
III-V semiconductors; gallium compounds; indium compounds; metallic thin films; photoluminescence; semiconductor quantum wells; silver; surface plasmons; Ag; InGaN-GaN; InGaN/GaN quantum wells; evaporated silver layers; surface plasmon enhanced light emitting efficiencies;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361691
Link To Document