• DocumentCode
    422223
  • Title

    Improvement of high power and high current operation of GaN light emitting diodes by laser lift-off technique

  • Author

    Lai, Fang-I ; Chu, Chen-Fu ; Chu, Jung-Tang ; Yu, Chang-Chin ; Lin, Chia-Feng ; Kuo, Hao-Chunk ; Wang, S.C.

  • Author_Institution
    Inst. of Electro-Optical Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    1
  • fYear
    2004
  • fDate
    16-21 May 2004
  • Abstract
    We have demonstrated the high operation current up to 400 mA for the laser lift-off InGaN/GaN LEDs on Cu heat sink with 3.5 fold increase in the light output power over the regular LEDs.
  • Keywords
    III-V semiconductors; copper; gallium compounds; heat sinks; laser materials processing; light emitting diodes; wide band gap semiconductors; Cu; Cu heat sink; InGaN-GaN; InGaN/GaN LED; laser lift-off technique; light emitting diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2004. (CLEO). Conference on
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-55752-777-6
  • Type

    conf

  • Filename
    1361692
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=422223