DocumentCode
422238
Title
GaNAs/GaAsSb type II active regions for 1.3-1.5 /spl mu/m operation
Author
Yang, Hyunsoo ; Lordi, Vincenzo ; Harris, James S.
Author_Institution
Solid States & Photonics Lab., Stanford Univ., CA, USA
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
We investigated a new active material consisting of GaNAs/GaAsSb type II quantum wells on GaAs for 1.3-1.5 /spl mu/m wavelength operation. Absorption spectra of two samples with different compositions were measured, showing good agreement with simulation.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; infrared spectra; optical materials; quantum well lasers; semiconductor quantum wells; 1.3 to 1.5 mum; GaNAs-GaAsSb; GaNAs/GaAsSb type II quantum wells; absorption spectra;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361707
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