DocumentCode
422241
Title
Optical properties of free-standing InP semiconductor nanowires
Author
González, J.C. ; Ugarte, D. ; Matinaga, F.M. ; Gutierrez, H.R. ; Cotta, M.A.
Author_Institution
Dept. de Fisica, Univ. Fed. de Minas Gerais, Campinas, Brazil
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
Growth and optical properties of InP nanowires will be presented. These wires (30 to 100 nm in diameter and longer than 5000 nm) were obtained by the vapor-liquid-solid growth in a chemical beam epitaxy reactor.
Keywords
III-V semiconductors; chemical beam epitaxial growth; indium compounds; liquid-vapour transformations; nanowires; optical materials; photoluminescence; semiconductor growth; semiconductor quantum wires; solid-liquid transformations; 30 to 100 nm; InP; chemical beam epitaxy reactor; free-standing InP semiconductor nanowires; optical properties; vapor-liquid-solid growth;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361710
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