Title :
Above room temperature CW edge-emitting lasers with GaAsP/GaAs/GaAsSb active regions
Author :
Yu, S.Q. ; Jin, Xinzhe ; Cao, Y. ; Ding, D. ; Wang, J.-B. ; Johnson, S.R. ; Zhang, Y.H. ; Dowd, P. ; Adamcyk, M. ; Chaparro, S.A.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
Abstract :
We report the first demonstration of CW operation of GaAsP/GaAs/GaAsSb QW lasers above room temperatures and show that the strain compensation improves the overall device performance
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; quantum well lasers; CW edge-emitting lasers; GaAsP-GaAs-GaAsSb; GaAsP/GaAs/GaAsSb QW lasers; strain compensation;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
