DocumentCode :
422324
Title :
Highly efficient light emission from III-nitride photonic crystal
Author :
Chen, Lu ; Nurmikko, Arto V. ; Krames, M.
Author_Institution :
Dept. of Phys., Brown Univ., Providence, RI
Volume :
1
fYear :
2004
fDate :
16-21 May 2004
Abstract :
Photonic crystal LEDs based on InGaN/GaN QWs was fabricated and exhibited eight-fold enhancement of light emission in far field. Polarization and pumping condition dependence of photonic crystal light emission were further studied
Keywords :
gallium compounds; indium compounds; light emitting diodes; photonic crystals; semiconductor quantum wells; wide band gap semiconductors; III-nitride photonic crystal; InGaN-GaN; InGaN/GaN QW; photonic crystal LED;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
Type :
conf
Filename :
1361820
Link To Document :
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