Title :
Optimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devices
Author :
Cheng, Yung-Chen ; Lin, En-Chiang ; Chen, Meng-Kuo ; Wu, Cheng-Ming ; Yang, C.C. ; Ma, Kung-Jen
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei
Abstract :
InGaN/GaN quantum well samples of various silicon doping conditions, including doping layers and concentrations, are compared in nano-structures and emission characteristics for design optimization. The best performance of barrier-doped samples originates from stronger carrier localization
Keywords :
elemental semiconductors; light emitting diodes; nanostructured materials; photoluminescence; semiconductor doping; semiconductor quantum wells; silicon; wide band gap semiconductors; InGaN/GaN quantum well light-emitting devices; carrier localization; design optimization; nanostructures; silicon doping;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
