DocumentCode
422357
Title
Ultrafast conductivity in amorphous semiconductors by time-resolved THz spectroscopy
Author
Vasudevan Nampoothiri, A.V. ; Dexheimer, S.L.
Author_Institution
Dept. of Phys., Washington State Univ., Pullman, WA
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
We present studies of photoconductivity on picosecond time scales in amorphous silicon (a-Si:H) and related materials using time-resolved THz techniques. We find a strongly non-Drude response with a power-law frequency dependence characteristic of disordered systems
Keywords
amorphous semiconductors; elemental semiconductors; photoconductivity; silicon; submillimetre wave spectroscopy; time resolved spectroscopy; Si:H; a-Si:H; amorphous semiconductors; amorphous silicon; nonDrude response; photoconductivity; power-law frequency dependence; time-resolved THz spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361859
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