Title :
Pulsed terahertz emission from indium nitride thin films
Author :
Ascazubi, R. ; Wilke, I. ; Denniston, K. ; Lu, H. ; Schaff, W.J.
Author_Institution :
Dept. of Phys., Rensselaer Polytech. Inst., Troy, NY
Abstract :
We report for the first time femtosecond optically excited terahertz pulse emission from indium nitride (InN). MBE-grown InN is a novel electronic material. The THz emission from InN is strong compared to previously investigated semiconductors
Keywords :
high-speed optical techniques; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor thin films; submillimetre wave spectra; wide band gap semiconductors; InN; MBE; femtosecond optically excited terahertz pulse emission; indium nitride thin films;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
