DocumentCode :
422383
Title :
Semiconductor-based carrier-envelope phase detector
Author :
Jirauschek, Christian ; Duan, Lingze ; Mucke, Oliver D. ; Kaertner, Franz ; Hof, Klaus D. ; Trirschler, T. ; Wegener, Martin
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
Volume :
1
fYear :
2004
fDate :
16-21 May 2004
Abstract :
We study the carrier-envelope phase sensitivity of the inversion in a two-band semiconductor and the influence of rapid dephasing of higher-lying states. The application of this effect for constructing a solid-state phase detector is investigated.
Keywords :
conduction bands; high-speed optical techniques; nonlinear optics; phase detectors; semiconductor device models; valence bands; carrier-envelope phase detector; rapid dephasing; two-band semiconductor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
Type :
conf
Filename :
1361891
Link To Document :
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