Title :
Low-operation-current and highly-reliable 1.3-/spl mu/m AlGaInAs strain compensated MQW-BH-DFB lasers for 100/spl deg/C, 10-Gb/s operation
Author :
Okuda, T. ; Muroya, Y. ; Ishikawa, S. ; Kobayashi, R. ; Tsuruoka, K. ; Ohsawa, Y. ; Nakamura, T.
Author_Institution :
1st Opt. Semicond. Dept., NEC Compound Semicond. Devices Ltd., Shiga, Japan
Abstract :
A record-low 25.8-mA/sub p-p/ modulation current for 10-Gb/s modulation at 100/spl deg/C was demonstrated using AlGaInAs strain compensated MQW-BH-DFB lasers. A median life of more than 1/spl times/10/sup 5/ hours at 85/spl deg/C was estimated after an aging test of 4000 hours.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium compounds; optical communication; optical modulation; quantum well lasers; 1.3 micron; 10 Gbit/s; 100 C; 100000 hours; 25.8 mA; 4000 hours; 85 C; AlGaInAs; AlGaInAs strain compensation; MQW-BH-DFB lasers; current modulation; low-operation-current;
Conference_Titel :
Optical Fiber Communication Conference, 2004. OFC 2004
Conference_Location :
Los Angeles, CA, USA
Print_ISBN :
1-55752-772-5
