GaSb-based 2.3 μm quantum-well diode-lasers with low beam divergence

Author

Rattunde, M. ; Schmitz, J. ; Kaufel, G. ; Wagner, J.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

Volume

1

fYear

2004

fDate

7-11 Nov. 2004

Firstpage

31

Abstract

A new design for the vertical waveguide structure of (AIGaIn)(AsSb)-based diode lasers is presented. The active layers of all investigated samples consist of compressively strained 10 nm wide Ga_0.64In_0.36As_0.10Sb_0.90-QWs, separated by 20 nm wide lattice matched Al_0.29Ga_0.71As_0.02Sb_0.98 barriers. The emission wavelength is 2.3 μm at room temperature. This new quantum-well diode laser design exhibits reduced beam divergence in the fast axis, while the laser performance is maintained compared to a standard large divergence waveguide design. This strong decrease in the fast axis divergence drastically increases the fiber coupling efficiency of GaSb-based diode lasers.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; infrared sources; laser beams; optical fibre couplers; quantum well lasers; waveguide lasers; 2.3 mum; 20 degC; 20 nm; Ga_0.64In_0.36As_0.10Sb_0.90-Al_0.29Ga_0.71As_0.02Sb_0.98; GaSb-based lasers; compressively strained quantum wells; diode-lasers; fast axis divergence; fiber coupling efficiency; laser performance; low beam divergence; quantum-well lasers; room temperature; vertical waveguide structure; wide lattice matched barriers; Diode lasers; Fiber lasers; Gas lasers; Laser beams; Lattices; Optical design; Quantum well lasers; Quantum wells; Temperature; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE

Print_ISBN

0-7803-8557-8

Type

conf

DOI

10.1109/LEOS.2004.1363095

Filename

1363095