Title :
GaSb-based 2.3 μm quantum-well diode-lasers with low beam divergence
Author :
Rattunde, M. ; Schmitz, J. ; Kaufel, G. ; Wagner, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
A new design for the vertical waveguide structure of (AIGaIn)(AsSb)-based diode lasers is presented. The active layers of all investigated samples consist of compressively strained 10 nm wide Ga0.64In0.36As0.10Sb0.90-QWs, separated by 20 nm wide lattice matched Al0.29Ga0.71As0.02Sb0.98 barriers. The emission wavelength is 2.3 μm at room temperature. This new quantum-well diode laser design exhibits reduced beam divergence in the fast axis, while the laser performance is maintained compared to a standard large divergence waveguide design. This strong decrease in the fast axis divergence drastically increases the fiber coupling efficiency of GaSb-based diode lasers.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; infrared sources; laser beams; optical fibre couplers; quantum well lasers; waveguide lasers; 2.3 mum; 20 degC; 20 nm; Ga0.64In0.36As0.10Sb0.90-Al0.29Ga0.71As0.02Sb0.98; GaSb-based lasers; compressively strained quantum wells; diode-lasers; fast axis divergence; fiber coupling efficiency; laser performance; low beam divergence; quantum-well lasers; room temperature; vertical waveguide structure; wide lattice matched barriers; Diode lasers; Fiber lasers; Gas lasers; Laser beams; Lattices; Optical design; Quantum well lasers; Quantum wells; Temperature; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363095
