Rational thermal circuit model derived from thermal simulation results for hybrid IPEM

This paper presents a rational approach to construct thermal circuit model for the hybrid integrated power electronic module (IPEM). All thermal resistances in the model are derived from thermal simulation results verified by experiments. With a simple form, the thermal circuit model not only increases estimation speed but also maintains good accuracy of estimation results when it is used to estimate the temperature of the heated insulated gate bipolar transistor (IGBT) and the average temperature on the control & protection printed circuit board (PCB). Especially, the agreement of estimation results by the thermal circuit model and thermal simulation results are less than 10% when the thermal circuit model is used to estimate the temperature of the heated IGBT. The thermal circuit model constructed by this approach can make the engineering design faster and satisfy engineering requirements in the design process of an IPEM.