Title :
A novel PT design concept of high voltage RC-GCTs
Author :
Zhang, C.L. ; Kim, S.C. ; Kim, E.D. ; Kim, H.W. ; Seo, K.S. ; Kim, N.K. ; Zhang, H.W. ; Yang, J. ; Wang, F.Z. ; Liu, H.Q.
Author_Institution :
Power Semiconductor Res. Group, Korea Electrotechnol. Res. Inst., Changwon, South Korea
Abstract :
A design rule for 5,500 V RC-GCTs (reserve-conducting gate-commutated thyristors) with a novel punch-through (PT) concept is described. PT and NPT (nonpunch-through) designs have been compared in detail. The simulation work indicates that PT-GCT design can achieve a forward breakdown voltage of 6,400 V with a minimum n-base layer width of 405 /spl mu/m. In addition, it exhibits the fast turn-on and turn-off performance via snubberless circuit.
Keywords :
commutation; thyristors; 405 micron; 5500 V; 6400 V; forward breakdown voltage; nonpunch-through designs; punch-through concept; reserve-conducting gate-commutated thyristors;
Conference_Titel :
Power Electronics and Motion Control Conference, 2004. IPEMC 2004. The 4th International
Conference_Location :
Xi´an
Print_ISBN :
7-5605-1869-9
