Title :
Fast soft reverse recovery diodes and thyristors with axial lifetime profile created by indium diffusion
Author :
Benda, Vitczslav ; Cernik, Martin
Author_Institution :
Dept. of Electrotechnol., Czech Tech. Univ., Prague
Abstract :
The results of a study carried out on P+PNN+ silicon power diodes diffused with indium at temperatures ranging from 850 to 950 degC are reported. The influence on of indium diffusion on parameters of power diodes with a designed breakdown voltage of about 2500 V was studied; results were compared with diode structures diffused with gold and reference samples without recombination centre diffusion. It was found that indium diffusion might he used successfully for the fabrication of fast, soft reverse recovery power diodes and thyristors
Keywords :
diffusion; indium; power semiconductor diodes; semiconductor device packaging; silicon; thyristors; 2500 V; 850 to 950 C; breakdown voltage; diode structures; fast soft reverse recovery diodes; formatting; indium diffusion; power diode fabrication; silicon power diodes; thyristors;
Conference_Titel :
Power Electronics and Motion Control Conference, 2004. IPEMC 2004. The 4th International
Conference_Location :
Xi´an
Print_ISBN :
7-5605-1869-9
