• DocumentCode
    423
  • Title

    Exoemission Properties of PDP Protective Layers

  • Author

    Yuxiang Chen ; Qing Li ; Wenjian Kuang ; Kai Hu ; Tolner, H.

  • Author_Institution
    Display Center, Southeast Univ., Nanjing, China
  • Volume
    60
  • Issue
    10
  • fYear
    2013
  • fDate
    Oct. 2013
  • Firstpage
    3485
  • Lastpage
    3492
  • Abstract
    The priming properties of four different types of protective layers inside plasma display panels (PDPs) are compared, using undoped MgO, Si-doped MgO, Sc-doped MgO, and MgCaO (15%) plasma protective layers. In a two-electrode type of PDP, the statistical spread in discharge formation time is measured, as a function of the waiting time from 5 μs to 50 ms, after excitation by a different number of sustain cycles (1-1024) at 200 and 10 kHz. The results are interpreted in terms of the delayed emission of exoelectrons from these oxide cathodes. The kinetics of the emission process is compared with that of the existing recombination emission models. An exocurrent contribution is present in all of the materials that decays with the square root of the waiting time. It is proportional to the electron density itself, and can qualitatively be explained by a three-particle Auger electron loss mechanism.
  • Keywords
    electrochemical electrodes; electron density; elemental semiconductors; exoelectron emission; magnesium compounds; plasma displays; scandium; silicon; time measurement; MgCaO; MgO; MgO:Sc; MgO:Si; PDP protective layer; discharge formation time measurement; electron density; exocurrent contribution; exoelectron emission process; exoemission property; frequency 10 kHz; frequency 200 kHz; oxide cathode; plasma display panel; recombination emission model; statistical spread; three-particle Auger electron loss mechanism; time 5 mus to 50 ms; two-electrode type; Discharges (electric); Electron traps; Jitter; Kinetic theory; Partial discharges; Spontaneous emission; Auger electron; MgCaO; Sc-doped MgO; Si-doped MgO; dielectric barrier plasma discharge; discharge formation time; exciton; exoemission; high-voltage insulation; protective layer; statistical variation; undoped MgO;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2013.2279152
  • Filename
    6589955