Title :
Flash memory cell diagnosis: high level model
Author :
Portal, J.M. ; Saillet, B. ; Née, D.
Author_Institution :
L2MP Polytech, Marseille, France
Abstract :
The objective of This work is to present a polynomial model of Flash memory cell suitable for silicon diagnosis purpose. This model allows a fast study of the geometric parameters of a flash memory cell. The failing geometric parameter is diagnosed taking as input the threshold voltages of the cell extracted during the parametric test and in plotting failure scenario using our high level model.
Keywords :
failure analysis; flash memories; high level synthesis; integrated circuit modelling; failure analysis; flash memory cell diagnosis; geometric parameters; high level model; parametric test; polynomial model; silicon diagnosis; threshold voltages; Degradation; Flash memory; Flash memory cells; Geometry; Nonvolatile memory; Polynomials; Solid modeling; Testing; Threshold voltage; Tunneling;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2004
Print_ISBN :
0-7803-8726-0
DOI :
10.1109/NVMT.2004.1380814
