DocumentCode
423937
Title
Flash memory cell diagnosis: high level model
Author
Portal, J.M. ; Saillet, B. ; Née, D.
Author_Institution
L2MP Polytech, Marseille, France
fYear
2004
fDate
15-17 Nov. 2004
Firstpage
100
Lastpage
104
Abstract
The objective of This work is to present a polynomial model of Flash memory cell suitable for silicon diagnosis purpose. This model allows a fast study of the geometric parameters of a flash memory cell. The failing geometric parameter is diagnosed taking as input the threshold voltages of the cell extracted during the parametric test and in plotting failure scenario using our high level model.
Keywords
failure analysis; flash memories; high level synthesis; integrated circuit modelling; failure analysis; flash memory cell diagnosis; geometric parameters; high level model; parametric test; polynomial model; silicon diagnosis; threshold voltages; Degradation; Flash memory; Flash memory cells; Geometry; Nonvolatile memory; Polynomials; Solid modeling; Testing; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Memory Technology Symposium, 2004
Print_ISBN
0-7803-8726-0
Type
conf
DOI
10.1109/NVMT.2004.1380814
Filename
1380814
Link To Document