Title :
A 200 GHz Medium Power Amplifier MMIC in Cascode Metamorphic HEMT Technology
Author :
Campos-Roca, Y. ; Tessmann, A. ; Amado-Rey, Belen ; Wagner, Steffen ; Massler, Hermann ; Hurm, V. ; Leuther, A.
Author_Institution :
Dept. of Comput. & Commun. Technol., Univ. de Extremadura, Caceres, Spain
Abstract :
A 200 GHz power amplifier is presented. The millimeter-wave monolithic integrated circuit (MMIC) has been realized in a 35 nm InAlAs/InGaAs cascode metamorphic high electron mobility transistor (MHEMT) process in grounded coplanar waveguide technology (GCPW). The amplifier demonstrates an output power of 14 mW with 11.4 dB compressed power gain at 200 GHz. This represents an increase in output power in comparison to previous reported MHEMT-based MMIC amplifiers. The small-signal gain demonstrates a peak value of 20 dB and is above 15.9 dB from 185 to 215 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave power amplifiers; InAlAs-InGaAs; cascode metamorphic HEMT technology; frequency 185 GHz to 215 GHz; gain 11.4 dB; gain 20 dB; high electron mobility transistor process; medium power amplifier MIMIC; millimeter wave monolithic integrated circuit; power 14 mW; size 35 nm; Coplanar waveguides; MMICs; Power amplifiers; Power generation; mHEMTs; Cascode HEMT; G-band; grounded coplanar waveguide (GCPW); metamorphic high electron mobility transistor (MHEMT); millimeter-wave monolithic integrated circuit (MMIC); power amplifier (PA);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2014.2348861
