DocumentCode :
424384
Title :
Technology Exploration for Adaptive Power and Frequency Scaling in 90nm CMOS
Author :
Meijer, Maurice ; Pessolano, F. ; Pineda de Gyvez, J.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
fYear :
2004
fDate :
11-11 Aug. 2004
Firstpage :
14
Lastpage :
19
Abstract :
In this paper we examine the expectations and limitations of design technologies such as adaptive voltage scaling (AVS) and adaptive body biasing (ABB) in a modern deep sub-micron process. To serve this purpose, a set of ring oscillators was fabricated in a 90nm triple-well CMOS technology. The analysis hereby presented is based on two ring oscillators running at 822MHz and 93MHz, respectively. Measurement results indicate that it is possible to reach 13.8x power savings by 3.4x frequency downscaling using AVS, ±11% power and ±8% frequency tuning at nominal conditions using ABB only, 22x power savings with 5x frequency downscaling by combining AVS and ABB, as well as 22x leakage reduction.
Keywords :
CMOS; adaptive body bias; adaptive voltage scaling; leakage; low power; performance optimization; CMOS; adaptive body bias; adaptive voltage scaling; leakage; low power; performance optimization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Power Electronics and Design, 2004. ISLPED '04. Proceedings of the 2004 International Symposium on
Conference_Location :
Newport Beach, CA, USA
Print_ISBN :
1-58113-929-2
Type :
conf
Filename :
1382953
Link To Document :
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