• DocumentCode
    424384
  • Title

    Technology Exploration for Adaptive Power and Frequency Scaling in 90nm CMOS

  • Author

    Meijer, Maurice ; Pessolano, F. ; Pineda de Gyvez, J.

  • Author_Institution
    Philips Research Laboratories, Eindhoven, The Netherlands
  • fYear
    2004
  • fDate
    11-11 Aug. 2004
  • Firstpage
    14
  • Lastpage
    19
  • Abstract
    In this paper we examine the expectations and limitations of design technologies such as adaptive voltage scaling (AVS) and adaptive body biasing (ABB) in a modern deep sub-micron process. To serve this purpose, a set of ring oscillators was fabricated in a 90nm triple-well CMOS technology. The analysis hereby presented is based on two ring oscillators running at 822MHz and 93MHz, respectively. Measurement results indicate that it is possible to reach 13.8x power savings by 3.4x frequency downscaling using AVS, ±11% power and ±8% frequency tuning at nominal conditions using ABB only, 22x power savings with 5x frequency downscaling by combining AVS and ABB, as well as 22x leakage reduction.
  • Keywords
    CMOS; adaptive body bias; adaptive voltage scaling; leakage; low power; performance optimization; CMOS; adaptive body bias; adaptive voltage scaling; leakage; low power; performance optimization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Power Electronics and Design, 2004. ISLPED '04. Proceedings of the 2004 International Symposium on
  • Conference_Location
    Newport Beach, CA, USA
  • Print_ISBN
    1-58113-929-2
  • Type

    conf

  • Filename
    1382953