DocumentCode
424384
Title
Technology Exploration for Adaptive Power and Frequency Scaling in 90nm CMOS
Author
Meijer, Maurice ; Pessolano, F. ; Pineda de Gyvez, J.
Author_Institution
Philips Research Laboratories, Eindhoven, The Netherlands
fYear
2004
fDate
11-11 Aug. 2004
Firstpage
14
Lastpage
19
Abstract
In this paper we examine the expectations and limitations of design technologies such as adaptive voltage scaling (AVS) and adaptive body biasing (ABB) in a modern deep sub-micron process. To serve this purpose, a set of ring oscillators was fabricated in a 90nm triple-well CMOS technology. The analysis hereby presented is based on two ring oscillators running at 822MHz and 93MHz, respectively. Measurement results indicate that it is possible to reach 13.8x power savings by 3.4x frequency downscaling using AVS, ±11% power and ±8% frequency tuning at nominal conditions using ABB only, 22x power savings with 5x frequency downscaling by combining AVS and ABB, as well as 22x leakage reduction.
Keywords
CMOS; adaptive body bias; adaptive voltage scaling; leakage; low power; performance optimization; CMOS; adaptive body bias; adaptive voltage scaling; leakage; low power; performance optimization;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Power Electronics and Design, 2004. ISLPED '04. Proceedings of the 2004 International Symposium on
Conference_Location
Newport Beach, CA, USA
Print_ISBN
1-58113-929-2
Type
conf
Filename
1382953
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