DocumentCode
424426
Title
A Comparative Study of MOS VCOs for Low Voltage High Performance Operation
Author
Zhan, J.H.C. ; Duster, J.S. ; Kornegay, K.T.
Author_Institution
Cornell University, Ithaca, New York
fYear
2004
fDate
11-11 Aug. 2004
Firstpage
244
Lastpage
247
Abstract
Six 10GHz MOS VCOs were designed and fabricated in the IBM 6RF 0.25um CMOS process. Their oscillation frequency, output amplitude and phase noise performance are measured and compared, and the results confirm that replacing shielded-ground inductors with high-resistvity substrate inductors improves phase noise performance. Capacitive source degeneration has also been identified as a performance limiting mechanism in MOS based VCOs rather than performance enhancing as in BJT based VCOs.
Keywords
FOM; Low power; Low voltage; Phase Noise; RF Design; VCO; FOM; Low power; Low voltage; Phase Noise; RF Design; VCO;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Power Electronics and Design, 2004. ISLPED '04. Proceedings of the 2004 International Symposium on
Conference_Location
Newport Beach, CA, USA
Print_ISBN
1-58113-929-2
Type
conf
Filename
1382997
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