DocumentCode
425723
Title
Post-packaging auto repair techniques for fast row cycle embedded DRAM
Author
Wada, Osamu ; Namekawa, Toshimasa ; Ito, Hioshi ; Nakayama, Atsushi ; Fujii, Shuso
Author_Institution
Semicond. Co., Toshiba Corp., Kawasaki, Japan
fYear
2004
fDate
26-28 Oct. 2004
Firstpage
1016
Lastpage
1023
Abstract
A test flow using a auto repair technique has also been proposed. It assumes a conventional wafer testing, but puts much weight on the post-package test by utilizing the proposed auto repair technique. This is implemented in a 36 Mb embedded DRAM macro of 6ns cycle time. It consists of internal compare circuit, redundancy analyzer, and anti-fuses. The internal auto programming of anti-fuse fixes post-packaging failures that might appear by final at-speed test and contributes to yield improvement.
Keywords
DRAM chips; integrated circuit testing; logic testing; 6 ns; anti-fuses; at-speed test; conventional wafer testing; fast row cycle embedded DRAM; internal auto programming; internal compare circuit; post-package test; post-packaging auto repair technique; post-packaging failures; redundancy analyzer; Built-in self-test; Circuits; Failure analysis; Frequency; Fuses; Packaging; Random access memory; Testing; Thermal stresses; Wafer scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Conference, 2004. Proceedings. ITC 2004. International
Print_ISBN
0-7803-8580-2
Type
conf
DOI
10.1109/TEST.2004.1387367
Filename
1387367
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